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| SMD Type Sillicon Epitaxial Schottky Barrier Diode 1SS345 Diodes SOT-23 Unit: mm Small interterminal capacitance (C=0.45pF typ). +0.1 2.4-0.1 Low forward voltage and excellent detection efficiency(VF=0.35V max) High breakdown voltage (VR=55V). Very small-sized package permitting the 1SS345-applied sets to be made small and slim. +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 Features +0.1 2.9-0.1 +0.1 0.4-0.1 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute M axim um R atings T a = 25 P aram eter Reverse V oltage Forward Current P ower Dissipation Junction Tem perature S torage tem perature Reverse B urning C = 25 pF S ym bol VR IF P Tj Tstg Bo V alue 55 10 150 125 -55 to +125 2 erg Unit V mA mW Electrical Characteristics Ta = 25 Parameter Forward Voltage Forward Current Reverse Voltage Reverse Current Interterminal Capacitance Symbol VR IF VR IR C Conditions IF = 1 mA VF = 1 V IR = 100 A 10 55 50 0.45 Min Typ Max 0.35 Unit V mA V A pF VR = 40 V VR = 10 V, f = 1 MHz Marking Marking AH +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1 |
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